发明名称 Semiconductor memory device with improved capacitor structure.
摘要 <p>A semiconductor device provided with capacitors which have accurate and reliable capacitance ratio, is disclosed. The semiconductor device comprises first and second capacitors. The first and second capacitors have substantially the same physical configuration but they have different dielectric layers of different values of dielectric constant. Thus, a capacitance ratio of the first capacitor to the second capacitor is determined in accordance with the dielectric constant ratio of the dielectric layers thereof.</p>
申请公布号 EP0299525(A2) 申请公布日期 1989.01.18
申请号 EP19880111431 申请日期 1988.07.15
申请人 NEC CORPORATION 发明人 TAJIMA, JUNJI
分类号 G11C11/401;H01L21/8242;H01L27/10;H01L27/108;H01L29/94 主分类号 G11C11/401
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