| 发明名称 |
Thin film field effect transistor. |
| 摘要 |
<p>A thin film transistor that includes a substrate (1); gate electrode (2); thin film semiconductor (4) insulated from the gate electrode (2); and a bias control electrode (9) is provided. The bias control electrode (9) is a p-n junction or a Schottky barrier that contacts the thin film semiconductor (4).</p> |
| 申请公布号 |
EP0299185(A2) |
申请公布日期 |
1989.01.18 |
| 申请号 |
EP19880108683 |
申请日期 |
1988.05.31 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRODSKY, MARC H.;FANG, FRANK F. |
| 分类号 |
H01L27/12;H01L29/78;H01L29/786;H01L29/808;H01L29/812;(IPC1-7):H01L29/78 |
主分类号 |
H01L27/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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