| 摘要 |
PURPOSE:To make damage as small as possible to a transparent conductive film and to obtain a semiconductor thin film good in its electrical characteristics on an interface, by forming an initial film part of the semiconductor thin film in contact with the transparent conductive film by the means of at least discharge decomposition of fluorosilane and III compound. CONSTITUTION:Fluorosilane or fluorodisilane is effective in use. Then, III arsenic compound or hydrogen compound is preferable for group III compound in use. A preferred ratio of a flow rate of the fluorosilane and the III compound is sufficient if III compound/fluorosilane=1X10<-7>-0.1. Manufacture of a mixed gas is not limited in particular. High-frequency glow discharge is effective in use for discharge decomposition. A transmitted substrate with a transparent conductive film, whose surface is cleaned by washing and/or etching, is located in a thin film forming device, and this substrate is heated at 100 deg.C-400 deg.C under vacuum exhaustion. A raw gas is supplied to this device, and pressure inside this device is made to be 1Torr or below to start a discharge operation. |
