发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To reduce a faulty development due to the application of a contrastenhanced film by allowing to prewet processing said film with a thinner developer than that is used for the development of a resist. CONSTITUTION:A photosensitive resin is applied on a substrate, and a water soluble org. film contg. a compd. having fading and bleaching properties is formed on the photosensitive resin film, and the photosensitive resin film and said water soluble org. film are selectively exposed, followed by allowing to prewet processing with a first developer. The photosensitive resin film and the water soluble org. film laminated on said resin film, which are selectively exposed and have two layer structure, are developed at the same time with an 2nd developer which has a concentration thicker than that of the 1st developer, followed by removing the water-soluble org. film. Namely, the dissolving speed of the contrastenhanced film 3 accelerates by allowing to prewet processing with the thinner developer than that used for the resist, whereby a contrastenhanced effect is fully displayed without generating variance in the dissolving speed of the resist layer 2.
申请公布号 JPS6410245(A) 申请公布日期 1989.01.13
申请号 JP19870165754 申请日期 1987.07.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ENDO MASATAKA;SASAKO MASARU;OGAWA KAZUFUMI
分类号 G03F7/30;G03F7/09;G03F7/095;H01L21/027;H01L21/30 主分类号 G03F7/30
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