| 摘要 |
PURPOSE:To remove completely the upper layer resist film before patterning a layer to be etched, by dividing the step for patterning the lower layer resist film into two portions, and interposing a step for removing completely the upper layer resist film between the divided patterning steps. CONSTITUTION:The upper part of the lower layer resist film 32 is patterned using the upper layer resist film 31 as a mask, and then, the upper layer resist film 31 is removed, followed by patterning the rear part of the lower layer resist film 32 using the upper part of the lower layer resist film 32 which is patterned on the upper part of said film 32, as a mask. Finally, the patterned lower layer resist film 32 is used for the mask. Thus, as the upper layer resist film 31 is removed completely before etching the material to be etched, any inconvenience does not generates in following steps. |
