| 摘要 |
PURPOSE:To largely improve yield and good productivity, to eliminate an anxiety of contamination of a device, and to further suppress the parasitic resistance of source, drain regions to one divided by several by continuously forming an amorphous silicon film and an N<+> type amorphous silicon film, avoiding the exposure of a photoresist with a plasma of glow discharge, and eliminating the use of a lifting OFF method. CONSTITUTION:A gate electrode 2 is formed on a glass substrate 1, and mixture gas is decomposed by a glow discharging method to continuously form a silicon nitride film 3, an amorphous silicon film 4 and an N<+> type amorphous silicon film 5. At least the films 4, 5 of the laminated films are insularly patterned. A silicon dioxide film 8 is formed by a glow discharging method, and a thin chromium silicide layer 11 is formed between the film 5 and the chromium. Eventually, source, drain electrodes 10 are formed to complete a thin film transistor. All the N<+> type amorphous silicon films are covered with low resistance silicide layers, and the source, drain regions are formed in a self-alignment manner. |
