| 摘要 |
PURPOSE:To provide a transverse mode controlling semiconductor laser device which can be manufacted by using a small number of processes by the MOVPE method, by forming a semiconductor layer of a second conductivity type on a mesa such that the bottom of the layer is wider than the top face of the mesa, and forming a current constriction layer of the first conductivity type on the top and side faces of the semiconductor layer as well as on the surface region of a clad layer other than the mesa such that a thickness of the current t constriction layer is smaller than the height of the mesa. CONSTITUTION:A semiconductor laser device of the invention comprises an N-type Al0.5In0.5P first clad layer 2 formed to a thickness of 1.2mum on an N-type GaAs semiconductor substrate 1 and an undoped Ga0.5In0.5P active layer 3. On the active layer 3, there are provided a P-type Al0.5In0.5P second clad layer 4 which is 1.2mum thick in a mesa region while 0.4mum thick out of the mesa region, a P-type GaAs cap layer 5 formed on the mesa region of the layer 4 such that the bottom thereof is wider than the top of the mesa, an N-type GaAs current constriction and light absorption layer 6 formed on the layer 4 as well as on the top and side faces of the cap layer 5, and a P-type GaAs contact layer 7 formed on the whole surface of the structure. |
