| 摘要 |
PURPOSE:To form wirings of narrow interval and long length at a semiconductor device and to inexpensively manufacture it with high yield by forcibly forming in advance a bending trend along a capillary end shape at the wirings and then bonding it to a secondary junction. CONSTITUTION:After a pure Cu wiring 2 is bonded to a primary junction 3 made of an Si chip 8 and an aluminum pad 7, a capillary 1 is drawn up directly above a junction point, and the wiring 2 is drawn in a necessary length for wiring. A U-shaped bending jig 6 made of stainless steel is so mounted as to reciprocate in parallel with the center line of the chip 8, and inserted onto the junction 3 simultaneously upon drawing of the capillary 1. The capillary 1 is moved down toward a secondary junction 4 having an Ag-plated layer 5, the wiring 2 is brought into contact with the jig 6 to be formed with a bending trend along the end of the capillary 1. The contact of the wiring 2 is sensed by a strain gauge attached to the holding arm of the capillary 1, the jig 6 is moved rearward by its signal, the capillary 1 is subsequently moved down to bond the wiring 2 to the junction 4. |
