发明名称 METHOD AND DEVICE FOR MEASURING PHOTORESIST CHARACTERISTIC
摘要 PURPOSE:To reduce the time for measuring dissolution characteristic of resist by simplifying a jig for attaching a substrate coated with the resist. CONSTITUTION:A substrate 7 coated with a resist film 6 is placed on the upper surface near the center of a jig 8 provided with a light transmitting part, and a developing soln. is dropped on the film 6. The development of the film 6 is begun immediately after dropping the soln., and the film 6 is dissolved in the soln. and the film thickness becomes thinner slowly. On one hand, the film 6 is irradiated with laser light from a source 13 of the laser light simultaneously with the dropping of the soln. from the rear side of the substrate 7. The intensity of reflected light is sensed with a photodetector 9, thus dissolution characteristic of the resist in the developing soln. is measured. The development may be executed by dropping the soln. after exposing the film 6 to a desired degree of exposure by irradiating the film 6 by opening or closing a shutter 2 to control the light from the light source 1.
申请公布号 JPS649449(A) 申请公布日期 1989.01.12
申请号 JP19870162339 申请日期 1987.07.01
申请人 HITACHI LTD 发明人 ITO TETSUO
分类号 G01N21/45;G03C5/02;G03F7/00;G03F7/20;G03F7/26;H01L21/027;H01L21/30;H01L21/66 主分类号 G01N21/45
代理机构 代理人
主权项
地址