| 摘要 |
PURPOSE:To suppress a carrier of a drain region, to prevent an OFF current from increasing, and to obtain preferable switching characteristic under light irradiation by forming a light shielding structure in which light is not radiated on the semiconductor layer of the drain region in the drain region. CONSTITUTION:A gate electrode 2 made of molybdenum is formed on a glass substrate 1, and a silicon nitride film which becomes a gate insulating film 3 is deposited by a plasma CVD method. A semiconductor thin film layer 4 is formed by patterning an amorphous silicon layer deposited by a plasma CVD method. In order to improve ohmic property, a phosphorus-doped amorphous silicon layer 11 is formed by a plasma CVD method among a source electrode 5, a drain electrode 6 and the layer 4. When a light 10 is irradiated from the gate of this thin film transistor, the electrode 2 becomes a light shielding layer. Accordingly, an amorphous silicon layer 7 of the region of the electrode 5 is merely irradiated with a light, and the electrode 6 is not radiated with the light. |
