| 摘要 |
PURPOSE:To make it possible to form an epitaxial layer, in which the impurity concentration of a planar doping layer is controlled, by temporarily stopping growth when the growth is started or during the growth, including a step for supplying only a group VI raw material and a step for supplying only a group V raw material furthermore, and using a group VI element as an impurity. CONSTITUTION:High resistance GaAs is used for a substrate crystal 11, and its crystal orientation is made to be (100) face. In growing, at first, the substrate crystal is placed in a reacting chamber 31, and the temperature is increased to a specified temperature. when the growing temperature is reached, HCl is supplied on Ga in a reacting chamber 32, and GaCl is yielded. When atmosphere is stabilized, the substrate crystal 11 is moved into the reacting chamber 32, and the gases are adsorbed. After the substrate is exposed to the gases for about 10 seconds, the substrate is moved into the reacting chamber 31. AsH3 is supplied, and GaAs of one-molecule layer is formed. The procedure is repeated, and a first GaAs layer 12 is formed to a specified thickness. A planar doping layer 13 is formed as follows. Only H2Se is supplied on the substrate, which is moved into the reacting chamber 31, and Se is adsorbed. Then Only AsH3 is supplied. The doping of 4e can be controlled by the feeding time and the feeding amount of AsH3.
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