| 摘要 |
<p>A process for producing crystalline solid solutions and in particular III-V semiconductors is described in which in a reactor, at least one component of the crystalline solid solution is evaporated from a source and mixed with the other component(s) of the crystalline solid solution in a gas phase containing compounds of hydrogen and chlorine, transported to a substrate, and deposited on the substrate. By varying the growth rate between approximately 1 νm/h and approximately 500 νm/h, the total pressure can be varied between approximately 80 mbar and approximately 1 mbar.</p> |
