METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, IN WHICH MATERIAL IS DEPOSITED FROM A REACTION GAS, AND APPARATUS FOR CARRYING OUT SUCH A METHOD

摘要

In the method a number of slices (1) of semiconductor material are heated in a reactor tube (11) arranged inside a furnace tube (10) and having a tube wall which is provided with openings (14), through which a reaction gas is passed for depositing a semiconductor material. This is effected by producing in the furnace tube a flow of the reaction gas along the outer side of the wall of the reactor tube and by passing only a part of this flow through the openings into the reactor tube. By the use of this method, it is prevented that particles of different size and composition - which may be formed in the reaction gas - are deposited on the slices.