| 摘要 |
PURPOSE:To form the title infrared ray emitting element with a wide range of operational temperature and low threshold current value by a method wherein InP is used for infrared laser substrate in a 2-3mum band while one or more semiconductor layers different in lattice constant from the InP substrate are used for an active layer and/or clad layer. CONSTITUTION:In0.52A0.48As the first clad layer 2 lattice matching with a substrate 1, an active layer 3 comprising InAs single quantum well in thickness of Lz 200Angstrom , In0.52Al0.48As the second clad layer 4, an In0.53Ga0.47As contact layer 5 and electrodes 6, 7 are provided on the InP substrate 1. The lattice constant aInAs of the active layer 3 is different from the lattice constant aInP of the substrate 1 and the clad layer 2, 4. The light emitting wavelength can be controlled by changing the thickness Lz of single quantum well layer. In other words, assuming the energy difference between the quantum level (e) of electron and the quantum level (h) of hole to be e.g. 0.5eV, luminescence in wavelength of 2.5mum can occur. At this time, Lz is assumed to be 80Angstrom and such an extremely thin layer can be easily formed by molecular beam epitaxial method (MBE), vapor lamination method (Mo-CVD) using organic metal, etc. |
