| 摘要 |
PURPOSE:To simplify the structure of a D-RAM, an occupying area of which is reduced, and manufacture by forming a first columnar section in broad width onto a semiconductor substrate and a second columnar section in narrow width onto the first columnar section, shaping a capacitor onto the sidewall of the first columnar section and forming a gate section for a MIS-Tr onto the sidewall of the second columnar section. CONSTITUTION:A plurality of first columnar protruding sections 31 are formed onto a semiconductor substrate 21, and second columnar protruding sections 32 in width narrower than each first columnar protruding section 31 are shaped onto the central sections of the first columnar protruding sections 31. Capacitor electrodes 23 are applied onto the sidewalls of said first columnar protruding sections 31 through insulating films 22, and first conductive layers 41 a word lines W are disposed respectively onto the capacitor electrodes 23 and the sidewalls of said second columnar protruding sections 32 through insulating films 24, 25. Second conductive layers 42 as bit lines B are connected to the upper sections of said second columnar protruding sections 32. Accordingly. MIS-Trs and capacitors are arranged in the longitudinal direction, thus reducing the occupying area of one cell. Since the conductive layers 41 can be shaped to approximately a flat surface, the conductive layers 41 can be easily patterned. |
