发明名称 PATTERN CORRECTING METHOD
摘要 PURPOSE:To securely correct a pattern with defective parts by correcting a 1st pattern in respective processes wherein a thin film is adhered on a 1st defect part and correcting a 2nd pattern in respective processes wherein a thin film is adhered on a 2nd defect part. CONSTITUTION:Areas 11d-11g of a resist 11 which are positioned at the peripheries of the part 11a of the resist 11 corresponding to the 1st defective part 2a, the part 11b of the resist 11 corresponding to a 3rd defective part 4a, and the part of the resist 11 corresponding to a 5th defective part 6a are exposed to form 1st resist patterns 13a-13d which are large in area of sticking on one main surface of a light-transmissive substrate 7. Then areas 18c-18e of a resist 18 which are positioned at the peripheries of the part 18a of the resist 18 corresponding to the 2nd defective part 3a and the part 18b of the resist 18 corresponding to a 4th defective part 5a to form 2nd resist patterns 20a-20c which are large in area of sticking on one main surface of the light transmissive substrate 7. Consequently, 1st-5th light shield patterns 2-6 are securely corrected.
申请公布号 JPS646954(A) 申请公布日期 1989.01.11
申请号 JP19870163186 申请日期 1987.06.29
申请人 HOYA CORP 发明人 CHIWATA TAKESHI
分类号 G03F1/00;G03F1/72;H01L21/027;H01L21/30 主分类号 G03F1/00
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