| 摘要 |
<p>PURPOSE:To miniaturize a device by using the technique, where a nucleus forming face and a non-nucleus forming face are formed on a substrate to selectively grow semiconductor single crystal, to directly produce a coordinate detecting circuit on an oscillation transmission plate. CONSTITUTION:A non-nucleus forming face 20 having a low nucleus forming density is formed on a glassy oscillation transmission plate 1, and a nucleus forming face 21 having a high nucleus forming density is thinly accumulated. A single nucleus consisting of thin film materials is formed only on the nucleus forming face 21 on a proper accumulation condition. According as accumulation continues, the nucleus grows while keeping the single crystal structure to become insular single crystal 22. The surface is flattened by etching or grinding, and an intergranular part 23 is removed to form a single crystal thin film 24 into a lattice. The known semiconductor element forming technique is used to form elements like transistors on the single crystal thin film 24 and elements are connected by a patter consisting of Al or the like to produce a desired electronic circuit.</p> |
