Semiconductor device having a floating gate.

摘要

In a semiconductor device having a floating gate electrode (16), an electric field to be applied to a gate oxide film (14) is locally modulated in a region where the floating gate electrode (16) overlaps a drain or source region (21). The device of the present invention is well suited for application as a nonvolatile memory cell, and it exhibits a slight leakage current in an erase operation and has a high immunity against the drain disturb phenomenon.