| 摘要 |
PURPOSE:To enable the drive of a transistor of this design by high voltage by a method wherein a channel stopper layer doped with impurity of polarity opposite to that of impurity doped to a diffusion layer is formed adjacently to the diffusion layer on the part where a channel is to be formed. CONSTITUTION:The region, which is lightly doped with impurity of polarity opposite to that of high concentrated impurity doped into a diffusion layer 5, or A channel stopper layer 8 is formed on the part where a channel of a poly-Si layer 2 is built and the diffusion layer 5 is adjacent. Therefore, depletion layer becomes short in length W and it is hard to happen that current suddenly flows (breakdown state) even if high voltage is applied. By these processes, breakdown strength between a drain and a source is improved, and thus a transistor can be driven by high voltage. |
