发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: To form semiconductors on an insulator by successively coating grooves with an anti-polishing layer and a layer of a chemically and mechanically polishable material having a thickness thicker than the depths of the grooves and terminating polishing when the polishing reaches the polishing- resistant layer. CONSTITUTION: After grooves 3 are formed on the main surface of a semiconductor body 1 to the depth equal to the desired value of the layer of the body 1 to be formed in a thin layer, an anti-polishing layer 4 composed of an anti- polishing material and a layer 5 of a chemically and mechanically polishable material having a thickness thicker than the depths of the grooves 3 are formed on the main surface of the body 1 including the grooves 3. Then the thickness of the body 1 is reduced by polishing the layer 5 to a flat and smooth surface and connecting the polished surface of the body 1 to the smooth flat surface of a carrier. In the processing, the polishing is terminated when the polishing reaches the layer 4. Therefore, 'semiconductors on insulator' can be obtained, because a plurality of semiconductor layers which are separated and insulated from each other are obtained with extremely high reproducibility.
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申请公布号 |
JPS647548(A) |
申请公布日期 |
1989.01.11 |
申请号 |
JP19880001390 |
申请日期 |
1988.01.08 |
申请人 |
PHILIPS GLOEILAMPENFAB:NV |
发明人 |
ERIZABESU MARIA REONTEINA AREKISANDERU;YAN HAISUMA;SEODORASU MARUCHINUSU MIHIERUSEN;YOHANESU UIRUHERUMUSU ADORIANUSU FUAN DERU FUERUDEN;YOHANESU FURANSHISUKASU KORINERISU MARIA FUERUHOOFUEN |
分类号 |
H01L21/304;H01L21/31;H01L21/762;H01L27/00 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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