| 摘要 |
PURPOSE:To make possible the more microscopical formation of the wiring structure of an LSI by a method wherein a recessed part is provided in a base insulating film before wiring are formed and a wiring material having a directional property is deposited at the time of formation of the wiring material to perform a patterning of the wiring. CONSTITUTION:In the case of the formation of a memory array part and so on, part of an intermediate insulating film 302 is removed using a photolitho etching technique to obtain a recessed part 303. At this time, it is better to form the etching shape at an acute angle (an overhang shape). Then, when a wiring material is formed using a deposition unit having a directional property, wirings 303 and 305 are formed. In this case, in case the step formed on the film 302 is small and in case the pitch between the wiring is large, the wiring material is formed thinly on a step sidewall part 306, but the isolation between the wiring can be completely executed at this time by removing the thin part of the wiring material using a wet etching method. Thereby, very closely adjacent wiring can be formed without any intervals between the wiring. |
