Semiconductor memory device having non-volatile memory transistors.

摘要

A semiconductor memory device having a redundancy memory cell array is disclosed. UV-PROM's are employed as a programming means in the redundancy control section. A first impurity region (17) is formed in the substrate (1) and the control gate electrode (61) of the UV-PROM is led out through the first impurity region. A second impurity region (76) is formed in the substrate (1) and crosses the first impurity region, and the floating gate electrode (12) of the UV-PROM is covered by a metallic film which is contacted to the second impurity region.