发明名称 |
Semiconductor memory with divided word lines and shared sense amplifiers |
摘要 |
A semiconductor memory device having a divided word line architecture in which each block of the memory array is divided into half-blocks and the half-blocks of each block are located on different halves of the device separated by the row decoder. A data line bussing scheme cooperates with this unique organization of the memory array to provide for sense amplifier sharing. This feature allows fewer, and larger sense amplifiers for better performance.
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申请公布号 |
US4797858(A) |
申请公布日期 |
1989.01.10 |
申请号 |
US19870031305 |
申请日期 |
1987.03.30 |
申请人 |
MOTOROLA, INC. |
发明人 |
WANG, KARL L.;SOOD, LAL C. |
分类号 |
G11C7/10;G11C8/12;G11C8/14;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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