| 摘要 |
PCT No. PCT/GB86/00423 Sec. 371 Date May 20, 1987 Sec. 102(e) Date May 20, 1987 PCT Filed Jul. 18, 1986 PCT Pub. No. WO87/00694 PCT Pub. Date Jan. 29, 1987.A method of producing a heterostructure device comprises defining in a substrate 5 of group III-V semiconductor material a structure, such as a mesa 9, having first and second faces oriented substantially parallel to the (100) and (111)A crystallographic planes. The mesa 9 is exposed to group III-V chemical reagents thereby to deposit group III-V materials on the first and/or second faces in dependence upon the group V constituent in the chemical reagents.
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