发明名称 Semiconductor laser
摘要 The present invention relates to phased-array semiconductor lasers having a radiation angle turnable by oscillating independently and stably between the fundamental supermode and the higher order supermode and switching the radiation angles by utilizing the property that their radiation angles are different. Optical switching and optical scanning, that have been difficult in the prior art, can be made more easily by use of a semiconductor laser having a turnable radiation angle. The objection of the present invention can be accomplished by disposing separate electrodes at the emission stripes and at the gap between the stripes in the phased-array semiconductor laser. Further, the present invention may be accomplished by dividing at least one stripe electrode in order to form electrode regions. When the current is applied to all the electrodes, oscillation occurs in the highest order mode and the beam is emitted in another direction. When the current is applied to only the electrode exclusive of the electrode regions, oscillation occurs in the fundamental mode and the beam is emitted in a direction vertical to a facet. Moreover, the present invention may be accomplished by disposing electrodes outside the stripe regions of the phased-array semiconductor laser so that oscillation occurs in the fundamental supermode when the electric field is applied to the electrodes and in the higher order mode when the electric field is not applied.
申请公布号 US4797891(A) 申请公布日期 1989.01.10
申请号 US19860941842 申请日期 1986.12.15
申请人 HITACHI, LTD, 发明人 UOMI, KAZUHISA;YOSHIZAWA, MISUZU;ONO, YUICHI;CHINONE, NAOKI;KAJIMURA, TAKASHI
分类号 H01S5/00;H01S5/042;H01S5/06;H01S5/062;H01S5/40;(IPC1-7):H01S3/19 主分类号 H01S5/00
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