| 摘要 |
PURPOSE:To facilitate manufacturing process, and reduce wiring resistance and contact resistance, by forming an amorphous tungsten nitride film as a barrier metal to isolate a semiconductor and a metal wiring, by applying a vapor phase reaction method of plasma excitation. CONSTITUTION:A memory cell part comprizes the following; a capacitor composed of a plate electrode 1 and a capacitor insulating film 2, a switching transistor composed of word lines 3a, 3b constituting a gate electrode, a source 4, and a drain 5, an insulating film 6 made of a boron phosphorus silicate glass (BPSG) film, and a contact hole 10 to connect the source 4 to an AlSi wiring constituting a bit line. By a plasma CVD equipment applying a gas in which tungusten hexafluoride gas, nitrogen gas and hydrogen gas are mixed with a ratio of 1:3:5, to material gas, a WVx thin film 20 of 800Angstrom thick is deposited, and next an Al thin film 21 of 8000Angstrom thick is deposited. |
