| 摘要 |
PURPOSE:To suppress light-deterioration rate, by providing a region where a light-absorption coefficient of a part of a power generation layer is equal to or more than a specific value. CONSTITUTION:This device is composed of the following parts: a transmissive and insulating substrate 1, a transparent electrode 2, a P type layer 3 made of hydrogenated amorphous silicon carbide, a power generation layer 4 made of hydrogenated amorphous silicon, an N type layer 5, and a metallic electrode 6. A light-absorption coefficient of the power generation layer 4 is made to be 5X10<4>cm<-1> or more at a wavelength of 700nm. Accordingly a film thickness of the power generation layer can be made about 3000Angstrom or less. Though the power generation layer is small in its film thickness, the light-absorption coefficient can be obtained to be sufficiently large. |
