发明名称 FORMATION OF DIFFRACTION GRATING
摘要 PURPOSE:To form simply a diffraction grating in antiphase to a resist shape on a substrate by forming a coating film layer on a diffraction grating layer formed of a resin without causing damage on the diffraction grating layer, forming a mask of an antiphase diffraction grating after removing a part on the diffraction grating, and etching a substrate using the mask. CONSTITUTION:A diffraction grating of a resist 2 comprising a resin material patterned on a substrate 1 is obtd. when a photosensitive resist comprising the resin material is subjected to interference fringes exposure and developed. In this case, when the process is carried out by the electron cyclotron resonance plasma CVD process, an SiNx layer 3 is formed on the resist 2 at low temp. without causing damage on the resist 2. The layer 3 on the resist 2 is removed by etching with buffer hydrofluoric acid utilizing the difference of etching speed. When the resist 2 is removed, a diffraction grating being in antiphase to the resist 2 by the effect of the layer 3 is formed. When this diffraction grating is used as mask, a diffraction grating being in antiphase to a resist shape is formed simply on the substrate 1.
申请公布号 JPS642008(A) 申请公布日期 1989.01.06
申请号 JP19870158280 申请日期 1987.06.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 SUGIMOTO HIROSHI;MATSUI TERUHITO;OTSUKA KENICHI;ABE YUJI;OISHI TOSHIYUKI
分类号 H01L21/205;G02B5/18;G02B6/122;G02B6/124;H01L21/302;H01S5/00 主分类号 H01L21/205
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