| 摘要 |
PURPOSE:To increase electron mobility by using an N-type GaAs layer, an N-type GaAs layer and an N-type GaAs layer formed onto an undoped buffer layer as a channel layer. CONSTITUTION:An undoped GaAs buffer layer 2 is shaped onto a semi-insulating GaAs substrate 1. An N-type InxGa1-xAs layer 3 having forbidden band width smaller than GaAs is formed onto the layer 2, thus inhibiting the exudation of carriers to the layer 2. A stress-free N-type GaAs layer 4 is shaped onto the layer 3, and these layers 3 and 4 are employed as a channel layer. A gate electrode 5 is attached onto the surface of the layer 4. Accordingly, electron mobility and drift velocity are increased and the effect of confinement of carriers can be improved, and a Schottky barrier FET having excellent gate characteristics can be acquired. |
