发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To enhance sensitivity without impairing a residual film rate by incorporating at least one of naphthols in the photoresist composition. CONSTITUTION:The photoresist composition of the title contains a novolak resin (A), a quinonediazide compound as a photosensitive agent, and the naphthol (B), such as alpha- or beta-naphthol, usable alone or in a combination of them. The resin (A) is obtained by additionally condensing cresols with formaldehyde, and its molecular weight distribution is as follows; a fraction of 150-500 amounts to 8-35%, that of 500-5,000 amounts to 0-25%, and that of >=5,000 amounts to 40-92%, and these molecular weights are obtained by the areal ratio of the gel permeation chromatographic pattern and expressed in terms of polystyrene.
申请公布号 JPS642038(A) 申请公布日期 1989.01.06
申请号 JP19870159176 申请日期 1987.06.25
申请人 SUMITOMO CHEM CO LTD 发明人 KAMIYA YASUNORI;HANABATAKE MAKOTO;NINOMIYA TAKAO;FURUTA AKIHIRO
分类号 G03C1/72;G03F7/023 主分类号 G03C1/72
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