发明名称 DIELECTRIC COMPOSITION WITH HIGH PERMITTIVITY
摘要 Ceramic dielectric compositions which have dielectric constants above 100, dissipation factors of less than 0.1 percent, and temperature coefficient characteristics of less than 150 ppm/ DEG C. The dielectric compositions are also sinterable at temperatures below 1,140 DEG C. Said compositions comprising about 84,7 to 86,4 % of a precursor material and 13.61 to 15.3 % of a frit composition, the precursor material comprising principally about 52,08 to 55,03 % neodymium oxide, 28,76 to 29,88 % titanium oxide, 8,32 to 11,15 % lead oxide, and 6,61 to 8,69 % barium oxide, the frit composition comprising about 10,00 to 10,20 % bismuth titanate, 2,35 to 4,35 % lead oxide, 0,28 to 0,70 % silicon oxide, 0,25 to 0,26 % niobium pentoxide, 0,09 to 0,50 % boron oxide, and 0,1 % manganese carbonate.
申请公布号 JPS643046(A) 申请公布日期 1989.01.06
申请号 JP19880090445 申请日期 1988.04.14
申请人 TAMU CERAMICS INC 发明人 MAIKERU ESU EICHI CHIYUU;DANIERU SHII ROOZU
分类号 C04B35/00;C04B35/46;C04B35/462;C04B35/50;H01B3/12;H01G4/12 主分类号 C04B35/00
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