| 摘要 |
PURPOSE:To contrive an increase in the integration of the title device and to make possible a stable operation by a method wherein first and second semiconductor layers, a first insulating layer, first and second apertures and third and fourth semiconductor layers are provided on a substrate and electrodes are respectively provided with the fourth semiconductor layer and the substrate. CONSTITUTION:A P-type semiconductor layer 11 is provided on an N-type Si substrate 10, an N-type semiconductor layer 12 is provided thereon and moreover, an insulating film 13 is provided and an aperture 14, which penetrates the film 13 and the layers 12 and 11 and reaches to the substrate 10, is formed. An N-type semiconductor layer 15, which is connected with the layer 12 and is isolated from the substrate 10, is formed on the sidewall of the aperture 14. Moreover, an insulating film 16 is formed on the peripheral surface of the aperture 14 excepting the bottom part of the aperture 14 and an aperture 17, which reaches to the surface of the layer 12, is formed in the film 13. The apertures 14 and 17 are filled to deposite a poly Si film 18 on the film 13, P is introduced in the surface region of the film 18 shown by oblique lines as an impurity to give the surface region a low resistance value, and the surface region as one electrode and the substrate 10 as the other electrode are connected to each other. |
