| 摘要 |
PURPOSE:To finish a semiconductor substrate in a good further stable state with no flaw and blur by using a polishing agent adding a fine grain-state physical abrasive agent to a chemical abrasive agent so as to generate the pressure of polishing to a light value. CONSTITUTION:Adding a grain-state polishing agent (for instance, colloidal silica) to a chemical abrasive agent, mechanically light physical abrasive action is provided. This polishing agent prevents by its physical abrasive action the surface of a wafer, being polished, from bluring. As a result, eliminating the necessity for high increasing the pressure of polishing, it can be performed by a light pressure. In this way, the polishing agent, applying a lighter pressure of polishing, causes no generation of damage and a flaw given to the wafer when it is polished, thus forming a better finished surface of polishing of the wafer. |
