发明名称 |
Bipolar-transistor type semiconductor memory device having redundancy configuration |
摘要 |
A bipolar-transistor type semiconductor memory device including a normal memory cell array, redundancy memory cell array, a redundancy driving circuit, and a redundancy address decision circuit. When the redundancy address decision circuit determines that the input address coincides with the address of a defective circuit portion, the redundancy driving circuit is driven to enable the redundancy memory cell array instead of the normal memory cell array.
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申请公布号 |
US4796233(A) |
申请公布日期 |
1989.01.03 |
申请号 |
US19850788587 |
申请日期 |
1985.10.17 |
申请人 |
FUJITSU LIMITED |
发明人 |
AWAYA, TOMOHARU;FUKUSHI, ISAO |
分类号 |
G11C29/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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