(A) ;Epitaxial wafer for use in production of light emitting diode,申请号US19790055377-传众专利搜索

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发明名称	(A) ;Epitaxial wafer for use in production of light emitting diode
摘要
申请公布号	US4252576(B1)	申请公布日期	1989.01.03
申请号	US19790055377	申请日期	1979.07.06
申请人		发明人
分类号	C30B25/02;C30B29/42;H01L21/205;H01L33/16;H01L33/30;H01L33/34	主分类号	C30B25/02
代理机构		代理人
主权项
地址

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