发明名称 |
Semiconductor device having a superlattice structure |
摘要 |
A semiconductor device having a plurality of laminated semiconductor layers in which a current flows in the direction of lamination. A superlattice layer is formed in at least one of the layers and the potential of the quantum well of the superlattice layer is lower than the potential of the semiconductor layer in which the superlattice layer is formed. The potential of the barrier of the superlattice layer is higher than the potential of the semiconductor layer in which said superlattice layer is formed.
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申请公布号 |
US4796067(A) |
申请公布日期 |
1989.01.03 |
申请号 |
US19860828254 |
申请日期 |
1986.02.11 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SHIMIZU, AKIRA;HARA, TOSHITAMI;NOJIRI, HIDETOSHI;HAKAMADA, ISAO;MIYAZAWA, SEIICHI;SEKIGUCHI, YOSHINOBU |
分类号 |
H01L29/80;H01L21/331;H01L29/15;H01L29/201;H01L29/73;H01L29/737;H01L29/812;H01S5/00;H01S5/343;(IPC1-7):H01L27/12;H01L33/00 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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