| 摘要 |
A silicon halide, preferably SiCl4, is reacted with an excess of a base, e.g. a Lewis base or Bronsted base with steric hindrance group to produce an adduct. The adduct, which need not be separated, is treated with ammonia gas to produce the imide of silicon. A light organic solvent is used. The temperature used is -78 DEG C. to 100 DEG C. and the reaction is rapid. Byproduct ammonium halide is removed, and the imide is heated at 1000 DEG C. to 1600 DEG C. in an oven in an atmosphere containing nitrogen, to produce silicon nitride of good sintering characteristics and more than 70 wt % of which is of the alpha -crystal form.
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