| 发明名称 |
Process for preparing phosphorus oxynitride and application to the passivation of III-V semiconductor compounds |
| 摘要 |
The present invention relates to a process for preparing phosphorus oxynitride and its application to the passivation of III-V semiconductor compounds. The process according to the invention is characterised in that ammonia is reacted with an ammonium monohydrogenphosphate and/or an ammonium dihydrogenphosphate, at a temperature of between 500 and 750 DEG .
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| 申请公布号 |
FR2617152(A1) |
申请公布日期 |
1988.12.30 |
| 申请号 |
FR19870008962 |
申请日期 |
1987.06.25 |
| 申请人 |
CENTRE NAL RECHERC SCIENTIFIQUE;ETAT FRANCAIS CNET |
发明人 |
ROGER MARCHAND;YVES LAURENT;PIERRE-NOEL FAVENNEC |
| 分类号 |
C01B21/097;C01B25/08;C22C1/00;H01L21/314;(IPC1-7):C01B21/097 |
主分类号 |
C01B21/097 |
| 代理机构 |
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