| 摘要 |
The present invention relates to an ultra-fast switch with tripping through a voltage, comprising a monocrystalline material 1 of the quasi-unidimensional type, with transport by charge density wave, placed at a temperature below the Peierls temperature, and semiconducting below this temperature, and metal electrodes 2, 3 of low contact resistance placed on either side of the crystal along its axis b. <IMAGE>
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