| 摘要 |
<p>An integrated circuit fabrication process for creating field oxide regions utilizes a relatively thick pad oxide layer (2) below a masking nitride layer (22), and a second, very thin, sidewall masking nitride layer (9) formed on the sidewalls of a recess which extends through the layers (2, 22) and into the substrate (1). The thin sidewall masking nitride layer (9) does not utilize an underlying pad oxide layer. Upon oxidation, the thin sidewall nitride (9) is concurrently lifted and converted to oxide, the materials and dimension being selected to ensure that when the field oxide level approaches the level of the thick pad oxide layer (2) stresses at the corners of the active silicon region are relieved through various oxide paths and accentuated oxidation effects.</p> |
