发明名称 IMPROVED CERMET RESISTIVE ELEMENT FOR VARIABLE RESISTOR
摘要 An improved resistive element comprises a film-type resistive layer applied to an insulative substrate and then fired. An array of discrete, spaced apart islands of predominantly conductive material is then applied to the resistive layer in a repetitive pattern having predetermined inter-island spacing. The islands have a conductivity that is substantially greater than the conductivity of the resistive layer. Preferably, the islands are of substantially uniform shape and size. In one preferred embodiment, the islands are formed of a conductive thick film ink that is screen-printed onto a cermet resistive layer through an appropriate mask, and then fired. In another preferred embodiment, the islands are formed of a conductive metal that is applied to the resistive layer by vapor deposition, sputtering, or ion implantation through a suitable mask. Either embodiment of the invention provides a resistive element with lower contact resistance and improved contact resistance stability than prior art film-type resistive elements, while maintaining good linearity, setability, and resolution.
申请公布号 GB2206244(A) 申请公布日期 1988.12.29
申请号 GB19880010457 申请日期 1987.09.18
申请人 * BOURNS INC 发明人 WAYNE PAUL * BOSZE;RONALD LEROY * FROEBE;GORDON * MCCLURE;RONALD ELWIN * THOMAS JR;PHILIP FREDERICK * WEINGARTNER
分类号 B32B3/14;B32B3/30;B32B7/02;H01C7/18;H01C10/30;H01C17/28;(IPC1-7):H01C7/00 主分类号 B32B3/14
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