| 摘要 |
The process of etching trenches in silicon wafers having smooth surfaces involves the use of masks made of photoresist for the purpose of etching deep trenches, especially negative resist. Etching deep trenches requires a long etching time, during which partial delamination of the photoresist may occur. The object of the invention is to specify an adhesion promoter and a method for preparing such an adhesion promoter which causes good adhesion of photoresist and thus provides for trench depths up to more than 150 mu m. The adhesion promoter is suitable for improving the adhesion of photoresists on silicon wafers for fabricating high-blocking power semiconductor components. Figure 2 shows a trench pattern which was produced, using an adhesion promoter according to the invention. <IMAGE>
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