| 摘要 |
In integrated logic circuits for switching speeds in the gigahertz range, the problem is to combine the requirements for high switching speed with ease of integration by means of conventional silicon technologies. The integrated logic circuit according to the invention is based on a base-Differential amplifier preceded by a ? and the ease of integration is obtained by the fact that a double frame structure with two windows is inserted into an n-conducting epitaxial layer which is arranged on a p-conducting substrate, which windows form insulated tubs in which in each case one transistor of the differential amplifier is arranged. The metafollower transistors and passive components can be arbitrarily arranged outside the insulation tubs without additional insulation so that, in addition, very short connecting lines are obtained. <IMAGE>
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