Branched monoalkyl group V A compounds as MOCVD element sources.

摘要

A process to produce one or more Group III A-V A element epitaxial layers over a crystalline substrate by reacting Group III A metalorganic vapors and a Group V A compound vapors on a heated substrate to form the epitaxial layers. These do not combine to form stable parasitic adducts if, as the Group V A compound vapor source, there is used a branched monoalkyl Group V A compound, the alkyl groups containing from about 3 to about 10 carbon atoms. In an embodiment, a phosphosilicate or an arsenosilicate glass is deposited on a semiconductor substrate when branched monoalkyl Group V A compounds are vaporized and reacted with sources of silicon and oxygen on the heated substrate.