| 摘要 |
PURPOSE:To form an amorphous silicon film in a uniform film thickness and uniform film quality, in forming the amorphous silicon film as an electrophotographic photosensitive body by CVD method, by providing roundness to the edge of a high frequency electrode to be used. CONSTITUTION:A sample holder 9 having a heater mounted thereto is put in a vacuum tank 7 and monosilane gas is introduced from a bomb 1 while said tank 7 is evacuated from an exhaust port 10 and high frequency voltage is applied to the electrode 8 provided to the outside of the vacuum tank 7 from a high frequency generating apparatus 11. Glow discharge is generated between the electrode 8 and the sample holder 9 and monosilane (SiH4) is decomposed to form an amorphous silicon film on the surface of a sample substrate. In this case, by forming roundness to the edge part of the high frequency electrode 8, non- uniformity of plasma caused by the edge effect of the electrode is eliminated and the thickness and the quality of the formed amorphous silicon film are entirely uniformized. |
