| 摘要 |
PURPOSE:To form a slant part having a gentle curve from a flat part highly accurately at the edge part of a pattern, by using a resist pattern having the cross sectional shape of an inverted trapezoid as a mask, and performing dry etching. CONSTITUTION:A surface layer to be machined 2 of an Si substrate 3 is formed. A photoresist film 5, which has a benzene ring as a photosensitive group is applied on the layer 2. Prebaking is performed for 20min at 80 deg.C. Then a desired region is expected to far ultraviolet rays. At this time, at first, photosensitive reaction occurs at the resist surface by the exposure to the far ultraviolet rays, and the surface region becomes insoluble. Since the ultraviolet rays are intensely absorbed after the reaction, however, transmission of the ultraviolet rays to the lower part is blocked, and the photosensitive reaction does not occur at the lower layer for the resist. Therefore, a resist pattern 5 having a cross sectional structure of an inverted trapezoid is formed. Ion milling is performed by using the resist pattern as a mask. Then, at first, the exposed part of the layer to be machined 2 is removed, and the resist pattern 5 is etched. By continuing the etching of the exposed layer to be machined 2, a pattern having a slant edge is formed. |
