| 摘要 |
PURPOSE:To increase the charge storage capacity while avoiding the deterioration of breakdown strength and the leakage of charge by a method wherein a high concentration impurity region is formed only below one diffused layer of a transistor connected to a capacitor lower electrode using an opening as a mask. CONSTITUTION:After forming a field oxide film 22 in a non-active region of a semiconductor substrate 21, a gate insulating film 23, a gate electrode 24, source.drain diffused layers 25a, 25b are successively formed in the active region to form a transistor. Next, an insulating film 26 is formed by coating on overall surface; an opening 27 is formed to connect the diffused layer 25b to a lower electrode of a memory capacity; and a high concentration impurity region 29 is formed by ion implantation 28 using the insulating film 26 as a mask. Finally, an N type polysilicon is coated; a capacitor lower electrode 30 is formed by a patterning process; a capacitor dielectric film 31 is formed; and a capacitor upper electrode 32 is formed. |
