| 摘要 |
PURPOSE:To increase the charge storage capacity by increasing the junction capacity only in the diffused layer part connected to a capacitor lower electrode. CONSTITUTION:A field oxide film 22 is formed in a non-active region on a P type silicon substrate 21 while a gate oxide film 23, a gate electrode 24 and a pair of N type diffused layers 25a, 25b are formed in an active region to constitute a transistor. A part of the N type diffused layer 25b is connected to a capacitor lower electrode 28 on an insulating film 26 through a selfcontact 27 as an opening made in overall surface of the insulating film 26 and the gate oxide film 23 on the substrate 21 and then a capacitor dielectric film 28 and a capacitor upper electrode 30 are arranged on the capacitor lower electrode 28 to constitute a memory capacitor. Furthermore, in the P type silicon substrate 21, an impurity region 31 is formed only below one N type diffused layer 25b connected to the capacitor lower electrode 28. |
