| 摘要 |
A charged beam pattern defect inspection apparatus for inspecting pattern defects on materials such as masks or wafers comprising: a collecting charged beam irradiation apparatus including scanning deflection device for accelerating and focusing the scanning beam, and a detector for detecting phenomenon produced by incident particles such as reflected electrons, secondary electrons, cathodeluminescent light, X rays, or absorption currents; a scanning and synchronous signal generator for generating a scanning signal to be control the scanning deflection means and a synchronous signal to fed into an A/D converter; a two-dimensional video memory including an A/D converter and an address signal generator; a video signal operator for operating the video signal stored in the two-dimensional video memory; a stage driving apparatus for driving a stage for holding the material to be inspected, which includes a position detector for detecting the position of the stage; an auxiliary memory device for storing inspection data; and a control operation apparatus for controlling the scanning and synchronous signal generator, the two dimensional video memory, the video signal operator, the stage driving apparatus, and the auxiliary memory device, and for outputting the output of the video signal operator as the result of pattern defect inspection.
|
