| 摘要 |
PURPOSE:To improve the passivation effect of a p-n junction surface by a method wherein a groove is provided on a buried layer so as to reach a clad layer of one conductivity type and the position of the junction face of a p-n junction consisting of a buried layer of a conductivity type opposite to that of the clad layer is varied. CONSTITUTION:A low concentration n-InP layer 11B is grown on a high concentration n<+>-InP substrate 11A. A p-InP buried layer 12 and an n-InP buried layer 13 are grown as they are buried after the formation of a mesa stripe. A separating groove 21 is provided on both sides of the mesa stripe in such a manner as it penetrates the n-InP buried layer 13, the p-InP buried layer 12, and the low concentration n-InP layer 11B and reaches to the high concentration n-InP layer 11A. Zn is diffused from the surface and a diffused region of the n-InP layer 11 is turned into a p-type. A p-n junction 20 is shifted, so that p-n junctions 20A and 20B are formed.
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